![]() The investigation of a wide variety of material systems reveals that static energetic disorder induced by ICTC dipole moments sets a general lower limit for E A at large doping concentrations. At low doping concentrations, charge transport is limited by the Coulomb binding energy of ICTCs, which can be minimized by systematic modification of the charge distribution on the individual ions. In this study, we disclose relationships between molecular parameters and the thermal activation energy ( E A) of the conductivity, revealing that charge transport is controlled by the properties of host–dopant integer charge transfer complexes (ICTCs) in efficiently doped organic semiconductors. Doped organic semiconductors typically exhibit a thermal activation of their electrical conductivity, whose physical origin is still under scientific debate.
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